document number: 94499 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 08-jun-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 phase control scr, 8 a vs-12tts08spbf high voltage series vishay semiconductors features ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec ? halogen-free according to iec 61249-2-21 definition ? designed and qualified for industrial level applications ? input rectification and crow-bar (soft start) ? vishay input diodes, switches and output rectifiers which are available in identical package outlines description the vs-12tts08spbf high voltage series of silicon controlled rectifiers are spec ifically designed for medium power switching and phase cont rol applications. the glass passivation technology used has reliable operation up to 125 c junction temperature. product summary v t at 8 a < 1.2 v i tsm 140 a v rrm 800 v 3 gate 2 anode 1 cathode d 2 pak output current in typical applications applications single-phase bridge three-phase bridge units capacitive input filter t a = 55 c, t j = 125 c, common heatsink of 1 c/w 13.5 17 a major ratings and characteristics parameter test conditions values units i t(av) sinusoidal waveform 8 a i t(rms) 12.5 v rrm /v drm 800 v i tsm 140 a v t 8 a, t j = 25 c 1.2 v dv/dt 150 v/s di/dt 100 a/s t j range - 40 to 125 c voltage ratings part number v rrm , maximum peak reverse voltage v v drm , maximum peak direct voltage v i rrm /i drm at 125 c ma vs-12tts08spbf 800 800 1.0
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94499 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 08-jun-10 vs-12tts08spbf high voltage series vishay semiconductors phase control scr, 8 a absolute maximum ratings parameter symbol test conditions values units maximum average on-state current i t(av) t c = 108 c, 180 conduction, half sine wave 8 a maximum rms on-state current i t(rms) 12.5 maximum peak one-cycle non-repetitive surge current i tsm 10 ms sine pulse, rated v rrm applied, t j = 125 c 120 10 ms sine pulse, no voltage reapplied, t j = 125 c 140 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied, t j = 125 c 72 a 2 s 10 ms sine pulse, no voltage reapplied, t j = 125 c 100 maximum i 2 t for fusing i 2 t t = 0.1 ms to 10 ms, no voltage reapplied, t j = 125 c 1000 a 2 s maximum on-state voltage drop v tm 8 a, t j = 25 c 1.2 v on-state slope resistance r t t j = 125 c 16.2 m threshold voltage v t(to) 0.87 v maximum reverse and direct leakage current i rm /i dm t j = 25 c v r = rated v rrm /v drm 0.05 ma t j = 125 c 1.0 typical holding current i h anode supply = 6 v, resistive load, initial i t = 1 a 30 maximum latching current i l anode supply = 6 v, resistive load 50 maximum rate of rise of off-state voltage dv/dt t j = 25 c 150 v/s maximum rate of rise of turned-on current di/dt 100 a/s triggering parameter symbol test conditions values units maximum peak gate power p gm 8.0 w maximum average gate power p g(av) 2.0 maximum peak positive gate current + i gm 1.5 a maximum peak negative gate voltage - v gm 10 v maximum required dc ga te current to trigger i gt anode supply = 6 v, resistive load, t j = - 65 c 20 ma anode supply = 6 v, resistive load, t j = 25 c 15 anode supply = 6 v, resistive load, t j = 125 c 10 maximum required dc ga te voltage to trigger v gt anode supply = 6 v, resistive load, t j = - 65 c 1.2 v anode supply = 6 v, resistive load, t j = 25 c 1 anode supply = 6 v, resistive load, t j = 125 c 0.7 maximum dc gate volt age not to trigger v gd t j = 125 c, v drm = rated value 0.2 maximum dc gate curr ent not to trigger i gd 0.1 ma switching parameter symbol test conditions values units typical turn-on time t gt t j = 25 c 0.8 s typical reverse recovery time t rr t j = 125 c 3 typical turn-off time t q 100
document number: 94499 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 08-jun-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vs-12tts08spbf high voltage series phase control scr, 8 a vishay semiconductors fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - on-state powe r loss characteristics fig. 4 - on-state powe r loss characteristics thermal and mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 125 c maximum thermal resistance, junction to case r thjc dc operation 1.5 c/w maximum thermal resistance, junction to ambient r thja 62 typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.5 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf ? cm (lbf ? in) maximum 12 (10) marking device case style d 2 pak (smd-220) 12tts08s 100 105 110 115 120 125 0246810 30 60 90 120 180 maximum allowable case temperature (c) conduc tion angle average on-state current (a) 12tts08 r (dc) = 1.5 k/ w thjc 100 105 110 115 120 125 02468101214 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period 12tts08 r (dc) = 1.5 k/ w thjc 0 1 2 3 4 5 6 7 8 9 10 0123456789 rm s li m i t conduction angle maximum average on-state power loss (w) average on-state current (a) 180 120 90 60 30 12tts08 t = 1 2 5 c j 0 2 4 6 8 10 12 14 02468101214 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) average on-state current (a) 12tts08 t = 125c j
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94499 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 08-jun-10 vs-12tts08spbf high voltage series vishay semiconductors phase control scr, 8 a fig. 5 - maximum non-repetitive surge current fig. 6 - maximu m non-repetitive surge current fig. 7 - on-state voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics 60 70 80 90 100 110 120 130 110100 number of equal amplitude half cycle current pulses (n) at any rated load condition and with rated v applied following surge. rrm peak half sine wave on-state current (a) initia l t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j 12tts 08 50 60 70 80 90 100 110 120 130 140 150 0.01 0.1 1 pe a k ha lf s ine wa ve on-sta te current (a) pu l se tra i n du r a t i o n ( s) maximum non repetitive s urge current versus pulse train duration. control of conduction may not be maintained. init ia l t = 125c no voltage reapplied rated v reap plied rrm j 12tts 08 1 10 100 1000 0.5 1 1.5 2 2.5 3 3.5 t = 2 5 c j instantaneous on-state current (a) in st a n t a n e o u s o n - st a t e v o l t a g e ( v ) t = 1 2 5 c j 12tts08 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 square wave pulse duration (s) st e a d y st a t e v a l u e (dc operation) si n g l e pu l se d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 thjc transient thermal impedance z (c/w) 12tts08
document number: 94499 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 08-jun-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 vs-12tts08spbf high voltage series phase control scr, 8 a vishay semiconductors ordering information table links to related documents dimensions www.vishay.com/doc?95046 part marking information www.vishay.com/doc?95054 packaging information www.vishay.com/doc?95032 1 - hpp product suffix 2 - current rating (12.5 a) 3 - circuit configuration: 4 - package: - pbf = lead (pb)-free 5 6 - voltage rating (08 = 800 v) t = single thyristor - type of silicon: t = to-220ac s = standard recovery rectifier 9 7 - s = to-220 d 2 pak (smd-220) version 8 - none = tube trl = tape and reel (left oriented) trr = tape and reel (right oriented) device code 5 1 3 24 6789 vs- 12 t t s 08 s trl pbf
document number: 95046 for technical questions within your region, please contact one of the following: www.vishay.com revision: 31-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 d 2 pak outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and toleranc ing per asme y14.5 m-1994 (2) dimension d and e do not include mold flash. mold flash sh all not exceed 0.127 mm (0.005") per side. these dimens ions are measu red at the outmost extremes of the plastic body (3) thermal pad contour optional with in dimension e, l1, d1 and e1 (4) dimension b1 and c1 a pply to base metal only (5) datum a and b to be determined at datum plane h (6) controlling dimension: inch (7) outline conforms to jedec outline to-263ab symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.06 4.83 0.160 0.190 d1 6.86 8.00 0.270 0.315 3 a1 0.00 0.254 0.000 0.010 e 9.65 10.67 0.380 0.420 2, 3 b 0.51 0.99 0.020 0.039 e1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.020 0.035 4 e 2.54 bsc 0.100 bsc b2 1.14 1.78 0.045 0.070 h 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 4 l 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 l1 - 1.65 - 0.066 3 c1 0.38 0.58 0.015 0.023 4 l2 1.27 1.78 0.050 0.070 c2 1.14 1.65 0.045 0.065 l3 0.25 bsc 0.010 bsc d 8.51 9.65 0.335 0.380 2 l4 4.78 5.28 0.188 0.208 c b detail a c2 a a a 0.004 b m a lead tip (3) (3) view a - a (e) (d1) e1 b h a1 detail ?a? rotated 90 cw scale: 8 :1 l gauge plane 0 to 8 l3 l4 seating plane section b - b and c - c scale: none (4) (4) ( b , b 2) b 1, b 3 (c) c1 base metal plating conforms to jedec outline d 2 pak (smd-220) 13 2 d c a l2 e (2)(3) (2) 4 h bb 2 x b 2 x b 2 l1 0.010 a b mm (3) e 2 x pad layout min. 11.00 (0.43) min. 9.65 (0.3 8 ) min. 3. 8 1 (0.15) min. 2.32 (0.0 8 ) 17.90 (0.70) 15.00 (0.625) 2.64 (0.103) 2.41 (0.096) lead assignments diodes 1. - anode (two die)/open (one die) 2., 4. - cathode 3. - anode
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